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| Product Specification www.jmnic.com Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high-frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE15029 Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25ae Total power dissipation TC=25ae Junction temperature Storage temperature 50 150 -65~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -16 -2 2 W UNIT V V V A A A THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT ae ae /W /W Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-1A ;IB=-0.1A IC=-1A ; VCE=-2V VCB=-120V; IE=0 VCE=-120V; IB=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-3A ; VCE=-2V IC=-4A ; VCE=-2V IC=0.5A;VCE=-10V;f=10MHz 40 40 40 20 30 MIN -120 MJE15029 SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT TYP. MAX UNIT V -0.5 -1.0 -10 -0.1 -10 |I |I V V A mA A MHz 2 Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE MJE15029 Fig.2 Outline dimensions (unindicated tolerance: A 0.10mm) 3 Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 4 |
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